US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Avalanche-protected transistors using a bottom breakdown current path and methods of forming the same" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-07-14

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,826, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Avalanche-protected transistors usi... और पढ़ें

US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on July 14 for "Semiconductor device and method for forming the same with doping regions having different conductivity types" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,827, issued on July 14, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan). "Semiconductor device and method for ... और पढ़ें

US Patent Issued to Diodes on July 14 for "Power MOSFET with gate-source ESD diode structure" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,828, issued on July 14, was assigned to Diodes Inc. (Plano, Texas). "Power MOSFET with gate-source ESD diode structure" was invented by Wan... और पढ़ें

US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on July 14 for "Field effect transistor" (Japanese Inventor)

पोस्टेड ऑन: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,829, issued on July 14, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. ... और पढ़ें

US Patent Issued to Fujian Jinhua Integrated Circuit on July 14 for "Semiconductor structure, method of forming the semiconductor structure, and semiconductor device" (Chinese Inventors)

पोस्टेड ऑन: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,830, issued on July 14, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor structure, method ... और पढ़ें

US Patent Issued to UNITED MICROELECTRONICS on July 14 for "Semiconductor device having a gate on a fin-shaped structure and multi-layer single diffusion break (SDB) features" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,831, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device having a gate on a fin... और पढ़ें

US Patent Issued to Intel on July 14 for "Epi barrier aligned backside contact" (Oregon Inventors)

पोस्टेड ऑन: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,832, issued on July 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Epi barrier aligned backside contact" was invented by Leonard P... और पढ़ें

US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Semiconductor device" (South Korean Inventors)

पोस्टेड ऑन: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,833, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Ho Jin... और पढ़ें

US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Complementary field effect transistor with conductive through substrate layer" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,834, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Complementary field effect transist... और पढ़ें

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Structure and formation method of semiconductor device with conductive contact" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-07-14

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ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,835, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Structure and formation method ... और पढ़ें

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US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Avalanche-protected transistors using a bottom breakdown current path and methods of forming the same" (Taiwanese Inventors)

US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on July 14 for "Semiconductor device and method for forming the same with doping regions having different conductivity types" (Taiwanese Inventors)

US Patent Issued to Diodes on July 14 for "Power MOSFET with gate-source ESD diode structure" (Taiwanese Inventors)

US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on July 14 for "Field effect transistor" (Japanese Inventor)

US Patent Issued to Fujian Jinhua Integrated Circuit on July 14 for "Semiconductor structure, method of forming the semiconductor structure, and semiconductor device" (Chinese Inventors)

US Patent Issued to UNITED MICROELECTRONICS on July 14 for "Semiconductor device having a gate on a fin-shaped structure and multi-layer single diffusion break (SDB) features" (Taiwanese Inventors)

US Patent Issued to Intel on July 14 for "Epi barrier aligned backside contact" (Oregon Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Semiconductor device" (South Korean Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Complementary field effect transistor with conductive through substrate layer" (Taiwanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Structure and formation method of semiconductor device with conductive contact" (Taiwanese Inventors)